Technical parameters/number of channels: 2
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 3.3 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 34A
Technical parameters/Input capacitance (Ciss): 5725pF @15V(Vds)
Technical parameters/rated power (Max): 3.3 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3.3W (Ta), 89W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: Power-56-8
External dimensions/length: 5.1 mm
External dimensions/width: 5.85 mm
External dimensions/height: 1.05 mm
External dimensions/packaging: Power-56-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AP1002BMX
|
Advanced Power Electronics | 功能相似 | Direct-FET |
Direct-FET N-CH 30V 32A
|
||
BMX
|
Advanced Power Electronics | 功能相似 |
TRANSISTOR 32 A, 30 V, 0.0018 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN AND LEAD FREE, GREENFET PACKAGE-3, FET General Purpose Power
|
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