Technical parameters/rated voltage (DC): 20.0 V
Technical parameters/rated current: 1.50 A
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 70 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 420 mW
Technical parameters/input capacitance: 324 pF
Technical parameters/gate charge: 3.30 nC
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/leakage source breakdown voltage: 20 V
Technical parameters/breakdown voltage of gate source: ±12.0 V
Technical parameters/Continuous drain current (Ids): 1.50 A
Technical parameters/rise time: 7 ns
Technical parameters/Input capacitance (Ciss): 324pF @10V(Vds)
Technical parameters/rated power (Max): 380 mW
Technical parameters/descent time: 7 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 420mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SC-70-6
External dimensions/length: 2 mm
External dimensions/width: 1.25 mm
External dimensions/height: 1.1 mm
External dimensions/packaging: SC-70-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Fairchild | 功能相似 | SC-70 |
N-Channel 2.5V Specified PowerTrench MOSFET
|
||
SI1426DH-T1-E3
|
Vishay Siliconix | 功能相似 | SC-70-6 |
MOSFET N-CH 30V 2.8A SC70-6
|
||
SI1426DH-T1-GE3
|
VISHAY | 功能相似 | SC-70 |
MOSFET N-CH 30V 2.8A SC-70-6
|
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