Technical parameters/dissipated power: 625W (Tc)
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/rise time: 360 ns
Technical parameters/Input capacitance (Ciss): 6460pF @25V(Vds)
Technical parameters/descent time: 230 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 625W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/packaging: TO-247-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Rail
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDH50N50_F133
|
ON Semiconductor | 功能相似 | 340CK |
N-Channel UniFETTM MOSFET 500V, 48A, 105mΩ
|
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