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Model FDD6N50FTM
Description UniFET™ N Channel MOSFET, Fairchild Semiconductor UniFET ™ MOSFET is Fairchild Semiconductor's high-voltage MOSFET series. It has the smallest on state resistance in planar MOSFETs, as well as excellent switching performance and high avalanche energy intensity. In addition, the internal gate source ESD diode enables UniFET-II ™ MOSFET can withstand surge stress exceeding 2000V HBM. UniFET ™ MOSFET is suitable for switch mode power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supply, ATX (advanced technology extension), and electronic lamp ballasts. ###MOSFET transistor, Fairchild Semiconductor offers a wide range of MOSFET device combinations, including high voltage (>250V) and low voltage (Fairchild MOSFET provides excellent design reliability by reducing voltage peaks and overshoot to reduce junction capacitance and reverse recovery charge, without the need for additional external components to maintain system startup and operation for longer periods of time.
Product QR code
Brand: Fairchild
Packaging TO-252-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
3.29  yuan 3.29yuan
5+:
$ 4.4402
25+:
$ 4.1113
50+:
$ 3.8810
100+:
$ 3.7824
500+:
$ 3.7166
2500+:
$ 3.6343
5000+:
$ 3.6015
10000+:
$ 3.5521
Quantity
5+
25+
50+
100+
500+
Price
$4.4402
$4.1113
$3.8810
$3.7824
$3.7166
Price $ 4.4402 $ 4.1113 $ 3.8810 $ 3.7824 $ 3.7166
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6565) Minimum order quantity(5)
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Technical parameters/polarity: N-CH

Technical parameters/dissipated power: 89 W

Technical parameters/drain source voltage (Vds): 500 V

Technical parameters/Continuous drain current (Ids): 5.5A

Technical parameters/rise time: 28.3 ns

Technical parameters/Input capacitance (Ciss): 960pF @25V(Vds)

Technical parameters/rated power (Max): 89 W

Technical parameters/descent time: 20.5 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 89W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-252-3

External dimensions/length: 6.73 mm

External dimensions/width: 6.22 mm

External dimensions/height: 2.39 mm

External dimensions/packaging: TO-252-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FDD6N50FTF FDD6N50FTF ON Semiconductor 类似代替 TO-252-3
N沟道MOSFET 500V ， 5.5A ， 1.15ヘ N-Channel MOSFET 500V, 5.5A, 1.15ヘ
PDF
FDD6N50FTF FDD6N50FTF Fairchild 类似代替 TO-252-3
N沟道MOSFET 500V ， 5.5A ， 1.15ヘ N-Channel MOSFET 500V, 5.5A, 1.15ヘ
PDF

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