Technical parameters/rated voltage (DC): 20.0 V
Technical parameters/rated current: 3.70 A
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 68 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.4 W
Technical parameters/input capacitance: 455 pF
Technical parameters/gate charge: 6.00 nC
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/leakage source breakdown voltage: 20 V
Technical parameters/breakdown voltage of gate source: 20.0 V
Technical parameters/Continuous drain current (Ids): 3.70 A
Technical parameters/rise time: 8 ns
Technical parameters/Input capacitance (Ciss): 455pF @10V(Vds)
Technical parameters/rated power (Max): 700 mW
Technical parameters/descent time: 8 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.4 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: MicroFET-6
External dimensions/length: 2 mm
External dimensions/width: 2 mm
External dimensions/height: 0.75 mm
External dimensions/packaging: MicroFET-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Customs information/ECCN code: EAR99
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