Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 5A
Encapsulation parameters/Encapsulation: SuperSOT
External dimensions/packaging: SuperSOT
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDC653N
|
Fairchild | 功能相似 | TSOT-23-6 |
FAIRCHILD SEMICONDUCTOR FDC653N 晶体管, MOSFET, N沟道, 5 A, 30 V, 35 mohm, 10 V, 1.7 V
|
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