Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 2.1 mΩ
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 254 W
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/leakage source breakdown voltage: 40 V
Technical parameters/Continuous drain current (Ids): 80A
Technical parameters/rise time: 19.3 ns
Technical parameters/Input capacitance (Ciss): 12200pF @25V(Vds)
Technical parameters/rated power (Max): 254 W
Technical parameters/descent time: 17.2 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 254W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.67 mm
External dimensions/width: 9.65 mm
External dimensions/height: 4.83 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDB8442-F085
|
ON Semiconductor | 功能相似 | TO-263-3 |
Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
|
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