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Model FCA76N60N
Description SupreMOS® MOSFET，Fairchild Semiconductor Fairchild Launched a new generation of 600V super junction MOSFET - SupreMOS ®。 600V SuperFET with Fairchild ™ Compared to MOSFETs, their low RDS (turn-on) and total gate charge reduce the quality factor (FOM) by 40%. In addition, the SupreMOS series provides low gate charge for the same RDS (on), offering excellent switching performance with a 20% reduction in switching and conduction losses, resulting in higher efficiency. These features make the power supply compliant with ENERGY STAR for desktop PCs ® 80 PLUS Gold Category and Platinum Category for servers. ###MOSFET transistor, Fairchild Semiconductor offers a wide range of MOSFET device combinations, including high voltage (>250V) and low voltage (Fairchild MOSFET provides excellent design reliability by reducing voltage peaks and overshoot to reduce junction capacitance and reverse recovery charge, without the need for additional external components to maintain system startup and operation for longer periods of time.
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Brand: Fairchild
Packaging TO-3-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
75.08  yuan 75.08yuan
1+:
$ 86.3443
10+:
$ 82.5902
100+:
$ 81.9145
250+:
$ 81.3889
500+:
$ 80.5630
1000+:
$ 80.1876
2500+:
$ 79.6620
5000+:
$ 79.2115
Quantity
1+
10+
100+
250+
500+
Price
$86.3443
$82.5902
$81.9145
$81.3889
$80.5630
Price $ 86.3443 $ 82.5902 $ 81.9145 $ 81.3889 $ 80.5630
Start batch production 1+ 10+ 100+ 250+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1522) Minimum order quantity(1)
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Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 0.028 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 543 W

Technical parameters/threshold voltage: 2 V

Technical parameters/drain source voltage (Vds): 600 V

Technical parameters/Continuous drain current (Ids): 76A

Technical parameters/rise time: 24 ns

Technical parameters/Input capacitance (Ciss): 12385pF @100V(Vds)

Technical parameters/rated power (Max): 543 W

Technical parameters/descent time: 32 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 543W (Tc)

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-3-3

External dimensions/length: 15.8 mm

External dimensions/width: 5 mm

External dimensions/height: 18.9 mm

External dimensions/packaging: TO-3-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/06/15

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