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Home Page   Discrete Device   transistor   IGBTtransistor   F3L200R12W2H3B11BPSA1
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Model F3L200R12W2H3B11BPSA1
Description Transistor, IGBT array&module, N-channel, 100 A, 1.55 V, 600 W, 1.2 kV, Module
Product QR code
Brand: Infineon
Packaging AG-EASY2B-2
Delivery time
Packaging method Tray
Standard packaging quantity 1
3766.44  yuan 3766.44yuan
1+:
$ 4143.0884
10+:
$ 4105.4240
25+:
$ 4086.5917
50+:
$ 4067.7595
100+:
$ 4048.9273
150+:
$ 4030.0951
250+:
$ 4011.2629
500+:
$ 3992.4306
Quantity
1+
10+
25+
50+
100+
Price
$4143.0884
$4105.4240
$4086.5917
$4067.7595
$4048.9273
Price $ 4143.0884 $ 4105.4240 $ 4086.5917 $ 4067.7595 $ 4048.9273
Start batch production 1+ 10+ 25+ 50+ 100+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1755) Minimum order quantity(1)
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Technical parameters/dissipated power: 600 W

Technical parameters/breakdown voltage (collector emitter): 1200 V

Technical parameters/Input capacitance (Cies): 11.5nF @25V

Technical parameters/rated power (Max): 600 W

Technical parameters/operating temperature (Max): 150 ℃

Package parameters/number of pins: 14

Encapsulation parameters/Encapsulation: AG-EASY2B-2

External dimensions/packaging: AG-EASY2B-2

Physical parameters/operating temperature: -40℃ ~ 150℃

Other/Product Lifecycle: Active

Other/Packaging Methods: Tray

Other/Manufacturing Applications: Drives, Uninterruptible Power Supply (UPS), Solar

Compliant with standards/RoHS standards:

Compliant with standards/lead standards: Lead Free

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