Technical parameters/rated current: 100 mA
Technical parameters/number of channels: 2
Technical parameters/polarity: NPN+PNP
Technical parameters/breakdown voltage (collector emitter): 50V, 12V
Technical parameters/maximum allowable collector current: 100mA/500mA
Technical parameters/minimum current amplification factor (hFE): 30
Technical parameters/rated power (Max): 150 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 150 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SOT-563
External dimensions/length: 1.6 mm
External dimensions/width: 1.2 mm
External dimensions/height: 0.5 mm
External dimensions/packaging: SOT-563
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DCX100NS-7
|
Diodes | 功能相似 | SOT-563-6 |
双极晶体管 - 预偏置 150mW R1+/-R2 R3=R4 Dual Complementary
|
||
EMD29T2R
|
ROHM Semiconductor | 类似代替 | SOT-563 |
EMT NPN+PNP 50V 500mA
|
||
EMF21-7
|
Diodes | 功能相似 | SOT-563 |
Trans Digital BJT NPN/PNP 12V 100mA/1A 300mW 6Pin SOT-563 T/R
|
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