Technical parameters/rated power: 333 W
Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.0035 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 333 W
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/leakage source breakdown voltage: 40 V
Technical parameters/Continuous drain current (Ids): 202A
Technical parameters/rise time: 190 ns
Technical parameters/Input capacitance (Ciss): 5669pF @25V(Vds)
Technical parameters/descent time: 33 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 333W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.66 mm
External dimensions/width: 4.82 mm
External dimensions/height: 16.51 mm
External dimensions/packaging: TO-220-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF1404PBF
|
Infineon | 类似代替 | TO-220-3 |
INFINEON IRF1404PBF 晶体管, MOSFET, N沟道, 162 A, 40 V, 4 mohm, 10 V, 4 V
|
||
IRF1404PBF
|
International Rectifier | 类似代替 | TO-220-3 |
INFINEON IRF1404PBF 晶体管, MOSFET, N沟道, 162 A, 40 V, 4 mohm, 10 V, 4 V
|
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