Technical parameters/drain source resistance: 1.50 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 69.0 W
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/leakage source breakdown voltage: 600 V
Technical parameters/breakdown voltage of gate source: ±30.0 V
Technical parameters/Continuous drain current (Ids): 4.00 A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STP5N62K3
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP5N62K3 功率场效应管, MOSFET, N沟道, 4.2 A, 620 V, 1.28 ohm, 10 V, 3.75 V
|
||
STU5N62K3
|
ST Microelectronics | 功能相似 | TO-251-3 |
N 通道 MDmesh™ K3 系列,SuperMESH3™, STMicroelectronics ### MOSFET 晶体管,STMicroelectronics
|
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