Technical parameters/dissipated power: 1 W
Technical parameters/access time (Max): 900 ns
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 1 W
Technical parameters/power supply voltage: 2.7V ~ 3.6V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 85℃ (TA)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
23K640-I/SN
|
Microchip | 功能相似 | SOIC-8 |
MICROCHIP 23K640-I/SN 芯片, SRAM, 串口, 64K, 2.7V, SOIC8
|
||
CY14MB064J2-SXI
|
Cypress Semiconductor | 完全替代 | SOIC-8 |
64千位(为8K ×8 )串行( I2C )的nvSRAM非易失性存储/调用 64-Kbit (8 K x 8) Serial (I2C) nvSRAM Nonvolatile STORE/RECALL
|
||
CY14MB064Q1B-SXI
|
Cypress Semiconductor | 完全替代 | SOIC-8 |
64千位(为8K ×8 ) SPI的nvSRAM 64-Kbit (8 K x 8) SPI nvSRAM
|
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