Technical parameters/rated voltage (DC): 50.0 V
Technical parameters/rated current: 500 mA
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 950 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 1000 @350mA, 2V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 16
Encapsulation parameters/Encapsulation: SOIC-16
External dimensions/packaging: SOIC-16
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ULN2003ADR
|
TI | 完全替代 | SOIC-16 |
TEXAS INSTRUMENTS ULN2003ADR 双极晶体管阵列, NPN, 50 V, 500 mA, SOIC
|
||
ULN2003ADR
|
Chipswinner | 完全替代 |
TEXAS INSTRUMENTS ULN2003ADR 双极晶体管阵列, NPN, 50 V, 500 mA, SOIC
|
|||
ULN2003AIDR
|
TI | 完全替代 | SOIC-16 |
TEXAS INSTRUMENTS ULN2003AIDR 双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC
|
||
ULQ2003ADR
|
TI | 完全替代 | SOIC-16 |
TEXAS INSTRUMENTS ULQ2003ADR 达林顿晶体管阵列, NPN, 7, 50V
|
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