Technical parameters/power supply voltage (DC): 5.00V (min)
Technical parameters/rise/fall time: 130ns, 50ns
Technical parameters/number of output interfaces: 2
Technical parameters/number of pins: 8
Technical parameters/dissipated power: 625 mW
Technical parameters/descent time (Max): 80 ns
Technical parameters/rise time (Max): 220 ns
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 625 mW
Technical parameters/power supply voltage: 5V ~ 20V
Technical parameters/power supply voltage (Max): 20 V
Technical parameters/power supply voltage (Min): 5 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/width: 4 mm
External dimensions/height: 1.5 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Each
Other/Manufacturing Applications: Motor Drive & Control, Power Management, Motor drive and control, power management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AUIRS2301S
|
Infineon | 完全替代 | SOIC-8 |
P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
|
||
AUIRS2301STR
|
IFC | 完全替代 |
P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
|
|||
AUIRS2301STR
|
International Rectifier | 完全替代 | SOIC |
P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
|
||
IRS2004SPBF
|
International Rectifier | 类似代替 | SOIC-8 |
INFINEON IRS2004SPBF 双路芯片, IGBT/MOSFET, 半桥, 10V-20V电源, 600mA输出, 150ns延迟, SOIC-8
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review