Technical parameters/frequency: 150 MHz
Technical parameters/number of pins: 3
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 250 mW
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/minimum current amplification factor (hFE): 100 @10mA, 1V
Technical parameters/rated power (Max): 250 mW
Technical parameters/DC current gain (hFE): 60
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 3 mm
External dimensions/width: 1.4 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2018/06/27
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBT3906LT1G
|
Rochester | 功能相似 | SOT-23 |
ON SEMICONDUCTOR MMBT3906LT1G 单晶体管 双极, 通用, PNP, -40 V, 250 MHz, 225 mW, -200 mA, 300 hFE
|
||
MMBT3906LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR MMBT3906LT1G 单晶体管 双极, 通用, PNP, -40 V, 250 MHz, 225 mW, -200 mA, 300 hFE
|
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