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Model RD06HVF1-101
Description MOS FETThe transistor is designed specifically for the application of VHF RF power amplifiers. MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
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Brand: Mitsubishi
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Delivery time
Packaging method
Standard packaging quantity 1
17.21  yuan 17.21yuan
5+:
$ 20.1357
50+:
$ 19.2752
200+:
$ 18.7933
500+:
$ 18.6729
1000+:
$ 18.5524
2500+:
$ 18.4147
5000+:
$ 18.3287
7500+:
$ 18.2426
Quantity
5+
50+
200+
500+
1000+
Price
$20.1357
$19.2752
$18.7933
$18.6729
$18.5524
Price $ 20.1357 $ 19.2752 $ 18.7933 $ 18.6729 $ 18.5524
Start batch production 5+ 50+ 200+ 500+ 1000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2113) Minimum order quantity(5)
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Technical parameters/output power: 6 W

Technical parameters/gain: 16 dB

Technical parameters/power supply voltage: 12.5 V

Package parameters/number of pins: 3

Other/Product Lifecycle: Active

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
RD06HVF1 RD06HVF1 Mitsubishi 功能相似
MOS FET型晶体管专为VHF射频功率放大器的应用而设计。 MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
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