Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 60 @5mA, 10V
Technical parameters/rated power (Max): 150 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SC-85
External dimensions/packaging: SC-85
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NSVMUN2212T1G
|
ON Semiconductor | 功能相似 | SC-59-3 |
数字晶体管( BRT ) R1 = 22千欧, R2 = 22 K· Digital Transistors (BRT) R1 = 22 k, R2 = 22 k
|
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