Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252
External dimensions/packaging: TO-252
Other/Gate Voltage Vgs: ±20V
Other/Rds On (Max) @ Id, Vgs: 5.5mΩ@10V
Other/continuous drain current Id: 80A
Other/drain source voltage Vds: 30V
Other/Packaging/Shell: TO-252
Other/FET types: N-Channel
Other/Pd - power dissipation (Max): 83W
Compliant with standards/RoHS standards: RoHS Compliant
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