Technical parameters/rated voltage (DC): 50.0 V
Technical parameters/rated current: 150 mA
Technical parameters/rated power: 0.15 W
Technical parameters/polarity: NPN+PNP
Technical parameters/dissipated power: 150 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 0.15A
Technical parameters/minimum current amplification factor (hFE): 120 @1mA, 6V
Technical parameters/Maximum current amplification factor (hFE): 560
Technical parameters/rated power (Max): 150 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 150 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: EMT-6
External dimensions/length: 1.6 mm
External dimensions/width: 1.2 mm
External dimensions/height: 0.5 mm
External dimensions/packaging: EMT-6
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
EMZ1T2R
|
ROHM Semiconductor | 类似代替 | EMT-6 |
ROHM EMZ1T2R 双极晶体管阵列, 双路, NPN, PNP, 50 V, 150 mW, 150 mA, 120 hFE, EMT
|
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