Technical parameters/rated voltage (DC): -60.0 V
Technical parameters/rated current: -100 mA
Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 120 @1mA, 6V
Technical parameters/rated power (Max): 500 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-563
External dimensions/packaging: SOT-563
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
EMT1DXV6T1G
|
ON Semiconductor | 完全替代 | SOT-563-6 |
NPN 晶体管,最大 1A,ON Semiconductor ### 标准 带 S 或 NSV 前缀的制造商部件号具有汽车资格,符合 AEC-Q101 标准。 ### 双极性晶体管,On Semiconductor ON Semiconductor 的各种双极晶体管,包括以下类别: 小信号晶体管 功率晶体管 双晶体管 复合晶体管对 高电压晶体管 射频晶体管 双极/FET 晶体管
|
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