Technical parameters/power supply current: 11 mA
Technical parameters/number of circuits: 1
Technical parameters/number of channels: 1
Technical parameters/conversion rate: 1.00 kV/μs
Technical parameters/gain bandwidth product: 3 GHz
Technical parameters/input compensation voltage: 500 µV
Technical parameters/input bias current: 12 µA
Technical parameters/3dB bandwidth: 670 MHz
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
EL5132IS
|
Elantec | 完全替代 | SOIC-8 |
670MHz Av=10低噪声电压反馈放大器
|
||
EL5132IS-T13
|
Intersil | 完全替代 | SOIC-8 |
670MHz低噪声放大器 670MHz Low Noise Amplifiers
|
||
EL5132IS-T7
|
Intersil | 完全替代 | SOIC-8 |
670MHz低噪声放大器 670MHz Low Noise Amplifiers
|
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