Technical parameters/rated voltage (DC): 300 V
Technical parameters/rated current: 1.00 A
Technical parameters/capacitors: 15.0 pF
Technical parameters/output current: ≤1.00 A
Technical parameters/forward voltage: 1.25V @1A
Technical parameters/polarity: Standard
Technical parameters/reverse recovery time: 50 ns
Technical parameters/forward voltage (Max): 1.25V @1A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: DO-41
External dimensions/packaging: DO-41
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Rochester | 类似代替 | DO-41 |
EGP10F: 1.0A快速恢复整流器
|
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EGP10F
|
Unspecified | 类似代替 |
EGP10F: 1.0A快速恢复整流器
|
|||
EGP10F
|
Luguang Electronic | 类似代替 |
EGP10F: 1.0A快速恢复整流器
|
|||
EGP10F
|
Shenzhen Taychipst Electronic | 类似代替 |
EGP10F: 1.0A快速恢复整流器
|
|||
EGP10F
|
Fairchild | 类似代替 | DO-41 |
EGP10F: 1.0A快速恢复整流器
|
||
EGP10F
|
General Semiconductor | 类似代替 |
EGP10F: 1.0A快速恢复整流器
|
|||
EGP10F
|
Shanghai Lunsure Electronic | 类似代替 |
EGP10F: 1.0A快速恢复整流器
|
|||
EGP10F
|
Sunmate | 类似代替 |
EGP10F: 1.0A快速恢复整流器
|
|||
EGP10F
|
ON Semiconductor | 类似代替 | DO-41 |
EGP10F: 1.0A快速恢复整流器
|
||
EGP10F
|
Zowie Technology | 类似代替 |
EGP10F: 1.0A快速恢复整流器
|
|||
EGP10F
|
Taiwan Semiconductor | 类似代替 |
EGP10F: 1.0A快速恢复整流器
|
|||
|
|
Vishay Semiconductor | 功能相似 | DO-41 |
DIODE 1A, 300V, SILICON, SIGNAL DIODE, DO-204AL, LEAD FREE, PLASTIC, DO-41, 2Pin, Signal Diode
|
||
EGP10FHE3
|
Shenzhen Taychipst Electronic | 功能相似 |
DIODE 1A, 300V, SILICON, SIGNAL DIODE, DO-204AL, LEAD FREE, PLASTIC, DO-41, 2Pin, Signal Diode
|
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