Technical parameters/rated voltage (DC): 200 V
Technical parameters/rated current: 1.00 A
Technical parameters/capacitors: 22.0 pF
Technical parameters/output current: ≤1.00 A
Technical parameters/forward voltage: 950mV @1A
Technical parameters/polarity: Standard
Technical parameters/dissipated power: 2.5 W
Technical parameters/thermal resistance: 50℃/W (RθJA)
Technical parameters/reverse recovery time: 50 ns
Technical parameters/forward current: 1 A
Technical parameters/forward voltage (Max): 950mV @1A
Technical parameters/forward current (Max): 1 A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-41
External dimensions/length: 5.21 mm
External dimensions/width: 2.72 mm
External dimensions/height: 5.2 mm
External dimensions/packaging: DO-41
Physical parameters/operating temperature: 65℃ ~ 150℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N4003-TP
|
Micro Commercial Components | 功能相似 | DO-41 |
MICRO COMMERCIAL COMPONENTS 1N4003-TP 二极管, 标准恢复型, 1A, 200V, DO-41
|
||
|
|
Vishay Semiconductor | 功能相似 | DO-41 |
ON SEMICONDUCTOR 1N4003G 快速恢复功率整流器
|
||
1N4003G
|
ON Semiconductor | 功能相似 | DO-41 |
ON SEMICONDUCTOR 1N4003G 快速恢复功率整流器
|
||
1N4003G
|
SMC | 功能相似 | DO-41 |
ON SEMICONDUCTOR 1N4003G 快速恢复功率整流器
|
||
1N4003G
|
Won-Top Electronics | 功能相似 | DO-41 |
ON SEMICONDUCTOR 1N4003G 快速恢复功率整流器
|
||
1N4003G
|
Taiwan Semiconductor | 功能相似 | DO-41 |
ON SEMICONDUCTOR 1N4003G 快速恢复功率整流器
|
||
1N4003G
|
Diotec Semiconductor | 功能相似 |
ON SEMICONDUCTOR 1N4003G 快速恢复功率整流器
|
|||
1N4003G
|
Gulfsemi | 功能相似 | DO-41 |
ON SEMICONDUCTOR 1N4003G 快速恢复功率整流器
|
||
1N4003G
|
Fairchild | 功能相似 | DO-41 |
ON SEMICONDUCTOR 1N4003G 快速恢复功率整流器
|
||
1N4003G
|
LiteOn | 功能相似 | DO-41 |
ON SEMICONDUCTOR 1N4003G 快速恢复功率整流器
|
||
1N4003G
|
Good-Ark Electronics | 功能相似 | DO-204AL |
ON SEMICONDUCTOR 1N4003G 快速恢复功率整流器
|
||
|
|
Diode Semiconductor Korea | 功能相似 |
ON Semiconductor 二极管 EGP10D, Io=1A, Vrev=200V, 50ns, 2引脚 DO-41封装
|
|||
EGP10D
|
Shenzhen Taychipst Electronic | 功能相似 |
ON Semiconductor 二极管 EGP10D, Io=1A, Vrev=200V, 50ns, 2引脚 DO-41封装
|
|||
EGP10D
|
Shanghai Lunsure Electronic | 功能相似 |
ON Semiconductor 二极管 EGP10D, Io=1A, Vrev=200V, 50ns, 2引脚 DO-41封装
|
|||
EGP10D
|
Luguang Electronic | 功能相似 |
ON Semiconductor 二极管 EGP10D, Io=1A, Vrev=200V, 50ns, 2引脚 DO-41封装
|
|||
EGP10D
|
Fairchild | 功能相似 | DO-41 |
ON Semiconductor 二极管 EGP10D, Io=1A, Vrev=200V, 50ns, 2引脚 DO-41封装
|
||
EGP10D
|
Rugao Dachang Electronics | 功能相似 |
ON Semiconductor 二极管 EGP10D, Io=1A, Vrev=200V, 50ns, 2引脚 DO-41封装
|
|||
EGP10D
|
Rochester | 功能相似 | DO-41 |
ON Semiconductor 二极管 EGP10D, Io=1A, Vrev=200V, 50ns, 2引脚 DO-41封装
|
||
EGP10D
|
Formosa Technology | 功能相似 |
ON Semiconductor 二极管 EGP10D, Io=1A, Vrev=200V, 50ns, 2引脚 DO-41封装
|
|||
EGP10D
|
Leshan Radio | 功能相似 | DO-41 |
ON Semiconductor 二极管 EGP10D, Io=1A, Vrev=200V, 50ns, 2引脚 DO-41封装
|
||
EGP10D
|
Taitron | 功能相似 |
ON Semiconductor 二极管 EGP10D, Io=1A, Vrev=200V, 50ns, 2引脚 DO-41封装
|
|||
EGP10D-E3/54
|
Vishay Siliconix | 功能相似 |
1A,Vishay Semiconductor Vishay 超快恢复整流器,具有非常快速的低至 15ns 反向恢复时间和高达 1500V 的电压级别。 典型应用包括较高频率切换模式电源 (SMPS)、反相器和续流二极管。 ### 二极管和整流器,Vishay Semiconductor
|
|||
EGP10D-E3/54
|
VISHAY | 功能相似 | DO-204AL |
1A,Vishay Semiconductor Vishay 超快恢复整流器,具有非常快速的低至 15ns 反向恢复时间和高达 1500V 的电压级别。 典型应用包括较高频率切换模式电源 (SMPS)、反相器和续流二极管。 ### 二极管和整流器,Vishay Semiconductor
|
||
UF1003-T
|
Diodes | 功能相似 | DO-41 |
UF1003 系列 200 V 1 A 通孔 超快 整流器 - DO-41
|
||
UF1003-T
|
Diodes Zetex | 功能相似 | DO-41 |
UF1003 系列 200 V 1 A 通孔 超快 整流器 - DO-41
|
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