Technical parameters/frequency: 150 MHz
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 0.25 W
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/minimum current amplification factor (hFE): 300 @100mA, 5V
Technical parameters/rated power (Max): 250 mW
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FMMT591ATA
|
Zetex | 功能相似 | SOT-23 |
晶体管-双极-BJT-单-PNP-40V-1A-150MHz-500mW-表面贴装型-SOT-23-3
|
||
FMMT591ATA
|
Diodes | 功能相似 | SOT-23-3 |
晶体管-双极-BJT-单-PNP-40V-1A-150MHz-500mW-表面贴装型-SOT-23-3
|
||
FMMT591ATA
|
Diodes Zetex | 功能相似 | SOT-23-3 |
晶体管-双极-BJT-单-PNP-40V-1A-150MHz-500mW-表面贴装型-SOT-23-3
|
||
PBSS5140T,215
|
NXP | 类似代替 | SOT-23-3 |
PNP 晶体管，NXP 一系列 NXP BISS（小信号的重大突破）低饱和电压 PNP 双极接线晶体管。 这些设备具有极低集电极-发射极饱和电压和高集电极电流容量，采用紧凑的空间节省型封装。 这些晶体管减少损失，可在用于切换和数字应用时减少热量的产生并整体提高效率。 ### 双极性晶体管，NXP Semiconductors
|
||
PMMT591A,215
|
NXP | 类似代替 | SOT-23-3 |
NXP PMMT591A,215 单晶体管 双极, PNP, -40 V, 150 MHz, 250 mW, -1 A, 300 hFE
|
||
ZXTP2041FTA
|
Diodes Zetex | 功能相似 | SOT-23 |
三极管(BJT) ZXTP2041FTA SOT-23
|
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