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Model NE3512S02-T1D-A
Description RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
Product QR code
Brand: California Eastern Laboratories
Packaging SO-2
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.02  yuan 1.02yuan
5+:
$ 1.3784
25+:
$ 1.2763
50+:
$ 1.2048
100+:
$ 1.1742
500+:
$ 1.1537
2500+:
$ 1.1282
5000+:
$ 1.1180
10000+:
$ 1.1027
Quantity
5+
25+
50+
100+
500+
Price
$1.3784
$1.2763
$1.2048
$1.1742
$1.1537
Price $ 1.3784 $ 1.2763 $ 1.2048 $ 1.1742 $ 1.1537
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3603) Minimum order quantity(5)
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Technical parameters/dissipated power: 165 mW

Technical parameters/leakage source breakdown voltage: 4 V

Technical parameters/breakdown voltage of gate source: 3 V

Technical parameters/gain: 13.5 dB

Technical parameters/operating temperature (Max): 125 ℃

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: SO-2

External dimensions/packaging: SO-2

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
NE3512S02-T1D-A NE3512S02-T1D-A NEC 功能相似 Surface Mount
Trans FET N-CH 4V 70mA HFET 4Pin Case S-02 T/R
PDF
NE3512S02-T1D-A NE3512S02-T1D-A California Eastern Laboratories 功能相似 SO-2
Trans FET N-CH 4V 70mA HFET 4Pin Case S-02 T/R
PDF
NE3512S02-T1D-A NE3512S02-T1D-A Renesas Electronics 功能相似 S02
Trans FET N-CH 4V 70mA HFET 4Pin Case S-02 T/R
PDF

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