Technical parameters/frequency: 870 MHz
Technical parameters/rated current: 5 A
Technical parameters/dissipated power: 59 W
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/output power: 15 W
Technical parameters/gain: 16 dB
Technical parameters/test current: 150 mA
Technical parameters/Input capacitance (Ciss): 45pF @12.5V(Vds)
Technical parameters/operating temperature (Max): 165 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 59000 mW
Technical parameters/rated voltage: 40 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: PowerSO-10RF
External dimensions/length: 7.5 mm
External dimensions/width: 9.4 mm
External dimensions/height: 3.5 mm
External dimensions/packaging: PowerSO-10RF
Physical parameters/operating temperature: -65℃ ~ 165℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PD85015S-E
|
ST Microelectronics | 完全替代 | PowerSO-10RF |
RF功率晶体管， LDMOST塑料系列N沟道增强模式横向的MOSFET RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
|
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