Technical parameters/rated voltage (DC): 1.00 kV
Technical parameters/rated current: 4.00 A
Technical parameters/output current: ≤4.00 A
Technical parameters/forward voltage: 1V @3A
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SIP-4
External dimensions/packaging: SIP-4
Physical parameters/operating temperature: -55℃ ~ 125℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
GBU4M
|
ON Semiconductor | 功能相似 | SIP-4 |
Bridge Rectifier Diode, 1 Phase, 2.8A, 1000V V(RRM), Silicon, 20.80 X 18MM, 3.3MM HEIGHT, ROHS COMPLIANT, PLASTIC PACKAGE-4
|
||
GBU4M
|
Diotec Semiconductor | 功能相似 |
Bridge Rectifier Diode, 1 Phase, 2.8A, 1000V V(RRM), Silicon, 20.80 X 18MM, 3.3MM HEIGHT, ROHS COMPLIANT, PLASTIC PACKAGE-4
|
|||
GBU4M
|
Fairchild | 功能相似 | SIP-4 |
Bridge Rectifier Diode, 1 Phase, 2.8A, 1000V V(RRM), Silicon, 20.80 X 18MM, 3.3MM HEIGHT, ROHS COMPLIANT, PLASTIC PACKAGE-4
|
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