Technical parameters/power supply current: 2.55 mA
Technical parameters/number of circuits: 2
Technical parameters/number of channels: 2
Technical parameters/common mode rejection ratio: 90 dB
Technical parameters/bandwidth: 12.5 MHz
Technical parameters/conversion rate: 20.0 V/μs
Technical parameters/gain bandwidth product: 12.5 MHz
Technical parameters/Over temperature protection: No
Technical parameters/input compensation voltage: 300 µV
Technical parameters/input bias current: 2 pA
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/gain bandwidth: 12.5 MHz
Technical parameters/Common Mode Rejection Ratio (Min): 90 dB
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/width: 3.9 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 125℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ISL28210FBZ-T7A
|
Renesas Electronics | 完全替代 | SOIC-8 |
精密放大器 ISL28210FBZ DLI LW NOISE JFET OPR
|
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