Technical parameters/rated power: 0.15 W
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 0.15 W
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 20 @5mA, 10V
Technical parameters/rated power (Max): 150 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/gain bandwidth: 250 MHz
Technical parameters/dissipated power (Max): 150 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SC-89-3
External dimensions/packaging: SC-89-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: PB free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DTA043EUBTL
|
ROHM Semiconductor | 功能相似 | SC-85-3 |
晶体管 双极预偏置/数字, 单路PNP, -50 V, -100 mA, 4.7 kohm, 4.7 kohm, 1 电阻比率
|
||
DTA123EG-AE3-R
|
UTC | 功能相似 |
DIGITAL TRANSISTORS
|
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