Technical parameters/rated voltage (DC): 70.0 V
Technical parameters/rated current: 5.00 A
Technical parameters/number of output interfaces: 1
Technical parameters/drain source resistance: 0.2 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 60 W
Technical parameters/threshold voltage: 800 mV
Technical parameters/drain source voltage (Vds): 70 V
Technical parameters/leakage source breakdown voltage: 70.0 V
Technical parameters/Continuous drain current (Ids): 5.00 A
Technical parameters/output current (Max): 3.5 A
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -40℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
VND5N07TR-E
|
ST Microelectronics | 类似代替 | TO-252-3 |
VND5N07 单通道 低边 自保护 70 V 5 A 0.2 Ohm 功率MOSFET TO-252-3
|
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