Technical parameters/frequency: 200 MHz
Technical parameters/rated voltage (DC): -40.0 V
Technical parameters/rated current: -600 mA
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 0.35 W
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/maximum allowable collector current: 0.6A
Technical parameters/minimum current amplification factor (hFE): 100 @150mA, 2V
Technical parameters/Maximum current amplification factor (hFE): 300
Technical parameters/rated power (Max): 350 mW
Technical parameters/dissipated power (Max): 350 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2.9 mm
External dimensions/width: 1.3 mm
External dimensions/height: 0.97 mm
External dimensions/packaging: SOT-23-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBT4403
|
CJ | 类似代替 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT4403 单晶体管 双极, PNP, 40 V, 200 MHz, 350 mW, 600 mA, 300 hFE
|
||
MMBT4403
|
Diodes | 类似代替 | SOT-23 |
FAIRCHILD SEMICONDUCTOR MMBT4403 单晶体管 双极, PNP, 40 V, 200 MHz, 350 mW, 600 mA, 300 hFE
|
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|
|
Freescale | 类似代替 |
FAIRCHILD SEMICONDUCTOR MMBT4403 单晶体管 双极, PNP, 40 V, 200 MHz, 350 mW, 600 mA, 300 hFE
|
|||
MMBT4403
|
UTC | 类似代替 | SOT-323 |
FAIRCHILD SEMICONDUCTOR MMBT4403 单晶体管 双极, PNP, 40 V, 200 MHz, 350 mW, 600 mA, 300 hFE
|
||
|
|
MDD | 类似代替 | PNP |
FAIRCHILD SEMICONDUCTOR MMBT4403 单晶体管 双极, PNP, 40 V, 200 MHz, 350 mW, 600 mA, 300 hFE
|
||
|
|
GUANGDONG HOTTECH INDUSTRIAL | 类似代替 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT4403 单晶体管 双极, PNP, 40 V, 200 MHz, 350 mW, 600 mA, 300 hFE
|
||
MMBT4403
|
ON Semiconductor | 类似代替 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT4403 单晶体管 双极, PNP, 40 V, 200 MHz, 350 mW, 600 mA, 300 hFE
|
||
MMBT4403
|
Micro Commercial Components | 类似代替 |
FAIRCHILD SEMICONDUCTOR MMBT4403 单晶体管 双极, PNP, 40 V, 200 MHz, 350 mW, 600 mA, 300 hFE
|
|||
|
|
先科ST | 类似代替 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT4403 单晶体管 双极, PNP, 40 V, 200 MHz, 350 mW, 600 mA, 300 hFE
|
||
|
|
Motorola | 类似代替 | CASE 318-08 |
FAIRCHILD SEMICONDUCTOR MMBT4403 单晶体管 双极, PNP, 40 V, 200 MHz, 350 mW, 600 mA, 300 hFE
|
||
MMBT4403
|
Samsung | 类似代替 | SOT-23 |
FAIRCHILD SEMICONDUCTOR MMBT4403 单晶体管 双极, PNP, 40 V, 200 MHz, 350 mW, 600 mA, 300 hFE
|
||
MMBT4403
|
Surge | 类似代替 | SOT-23 |
FAIRCHILD SEMICONDUCTOR MMBT4403 单晶体管 双极, PNP, 40 V, 200 MHz, 350 mW, 600 mA, 300 hFE
|
||
|
|
ON Semiconductor | 完全替代 | SOT-23 |
PNP外延硅晶体管 PNP Epitaxial Silicon Transistor
|
||
MMBT4403K
|
Fairchild | 完全替代 | SOT-23-3 |
PNP外延硅晶体管 PNP Epitaxial Silicon Transistor
|
||
MMBT4403_D87Z
|
Fairchild | 类似代替 | SOT-23-3 |
Trans GP BJT PNP 40V 0.6A 3Pin SOT-23 T/R
|
||
MMBT4403_D87Z
|
ON Semiconductor | 类似代替 | SOT-23-3 |
Trans GP BJT PNP 40V 0.6A 3Pin SOT-23 T/R
|
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