Technical parameters/power supply voltage: 3.3 V
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: PDIP
External dimensions/packaging: PDIP
Other/Memory configurations: 128Kx16
Other/Speed: 100ns
Other/Power supply voltage: 3.3V
Other/Package: PDIP
Other/Type: Parallel
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DS1258W-150#
|
Dallas Semiconductor | 功能相似 | PDIP |
Non-Volatile SRAM Module, 128KX16, 150ns, CMOS, 0.74INCH, ROHS COMPLIANT, DIP-40
|
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