Technical parameters/power supply voltage (DC): 5.00 V, 5.25 V (max)
Technical parameters/clock frequency: 100 GHz
Technical parameters/access time: 100 ns
Technical parameters/memory capacity: 16000 B
Technical parameters/power supply voltage: 4.75V ~ 5.25V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 24
Encapsulation parameters/Encapsulation: DIP-24
External dimensions/packaging: DIP-24
Physical parameters/operating temperature: -40℃ ~ 85℃ (TA)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Dallas Semiconductor | 类似代替 | DIP |
IC NVSRAM 16Kbit 100NS 24DIP
|
||
DS1220AD-100IND+
|
Maxim Integrated | 类似代替 | DIP-24 |
MAXIM INTEGRATED PRODUCTS DS1220AD-100IND+ 芯片, 存储器, NVRAM
|
||
DS1220AD-100IND+
|
Dallas Semiconductor | 类似代替 | DIP |
MAXIM INTEGRATED PRODUCTS DS1220AD-100IND+ 芯片, 存储器, NVRAM
|
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