Technical parameters/power supply voltage (DC): 5.00 V, 5.25 V (max)
Technical parameters/clock frequency: 70.0 GHz
Technical parameters/access time: 70.0 ns
Technical parameters/memory capacity: 32000 B
Technical parameters/power supply voltage: 4.75V ~ 5.25V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 28
Encapsulation parameters/Encapsulation: DIP-28
External dimensions/packaging: DIP-28
Physical parameters/operating temperature: 0℃ ~ 70℃ (TA)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Maxim Integrated | 类似代替 | DIP-28 |
IC NVSRAM 256Kbit 70NS 28DIP
|
||
DS1230Y-70IND
|
Dallas Semiconductor | 类似代替 | DIP |
IC NVSRAM 256Kbit 70NS 28DIP
|
||
DS1230Y-70IND+
|
Maxim Integrated | 功能相似 | EDIP-28 |
MAXIM INTEGRATED PRODUCTS DS1230Y-70IND+ 芯片, 存储器, NVRAM
|
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