Technical parameters/working voltage: 4.5V ~ 5.5V
Technical parameters/access time: 150 ns
Encapsulation parameters/Encapsulation: DIP
External dimensions/packaging: DIP
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Dallas Semiconductor | 完全替代 | 720 EMOD |
MAXIM INTEGRATED PRODUCTS DS1225Y-150+ 芯片, 存储器, NVRAM, CMOS 64K, 1225, DIP28 新
|
||
DS1225Y-150IND
|
Maxim Integrated | 类似代替 | EDIP-28 |
64K Nonvolatile SRAM
|
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