Technical parameters/frequency: 5 MHz
Technical parameters/power supply voltage (DC): 1.80V (min)
Technical parameters/working voltage: 1.8V ~ 5.5V
Technical parameters/power supply current: 10 mA
Technical parameters/clock frequency: 20 MHz
Technical parameters/access time: 80 ns
Technical parameters/memory capacity: 500 B
Technical parameters/access time (Max): 80 ns
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/power supply voltage: 1.8V ~ 5.5V
Technical parameters/power supply voltage (Max): 5.5 V
Technical parameters/power supply voltage (Min): 1.8 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5.05 mm
External dimensions/width: 3.99 mm
External dimensions/height: 1.48 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BR25L040FJ-WE2
|
ROHM Semiconductor | 功能相似 | SOIC-8 |
高可靠性串行EEPROM SPI总线串行EEPROM High Reliability Serial EEPROMs SPI BUS Serial EEPROMs
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CAT25040VI-G
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ON Semiconductor | 功能相似 | SOIC-8 |
ON SEMICONDUCTOR CAT25040VI-G 芯片, 存储器, EEPROM, 4Kb, 串行口, 10MHZ, SOIC-8
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|
Catalyst | 功能相似 | SOP |
ON SEMICONDUCTOR CAT25040VI-G 芯片, 存储器, EEPROM, 4Kb, 串行口, 10MHZ, SOIC-8
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CAT25040VI-GT3
|
ON Semiconductor | 功能相似 | SOIC-8 |
ON SEMICONDUCTOR CAT25040VI-GT3 EEPROM, 4 Kbit, 512 x 8位, 10 MHz, SPI, SOIC, 8 引脚
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