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Model DMT10H015LFG-13
Description MOSFET N-CH 100V 10A
Product QR code
Brand: Diodes
Packaging PowerDI-3333-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
3.54  yuan 3.54yuan
5+:
$ 4.7750
25+:
$ 4.4213
50+:
$ 4.1737
100+:
$ 4.0676
500+:
$ 3.9968
2500+:
$ 3.9084
5000+:
$ 3.8730
10000+:
$ 3.8200
Quantity
5+
25+
50+
100+
500+
Price
$4.7750
$4.4213
$4.1737
$4.0676
$3.9968
Price $ 4.7750 $ 4.4213 $ 4.1737 $ 4.0676 $ 3.9968
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3769) Minimum order quantity(5)
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Technical parameters/number of channels: 1

Technical parameters/drain source resistance: 13.5 mΩ

Technical parameters/polarity: N-CH

Technical parameters/dissipated power: 2 W

Technical parameters/threshold voltage: 2 V

Technical parameters/drain source voltage (Vds): 100 V

Technical parameters/leakage source breakdown voltage: 100 V

Technical parameters/Continuous drain current (Ids): 10A

Technical parameters/rise time: 7 ns

Technical parameters/Input capacitance (Ciss): 1871pF @50V(Vds)

Technical parameters/descent time: 8.1 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): 55 ℃

Technical parameters/dissipated power (Max): 2W (Ta), 35W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: PowerDI-3333-8

External dimensions/length: 3.3 mm

External dimensions/width: 3.3 mm

External dimensions/height: 0.8 mm

External dimensions/packaging: PowerDI-3333-8

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
DMT10H015LFG-7 DMT10H015LFG-7 Diodes 类似代替 PowerDI-3333-8
100V N-CHANNEL ENHANCEMENT MODE MOSFET
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