Technical parameters/rated power: 15 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 17 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 15 W
Technical parameters/drain source voltage (Vds): 400 V
Technical parameters/rise time: 15 ns
Technical parameters/Input capacitance (Ciss): 300 pF
Technical parameters/descent time: 20 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 15W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.7 mm
External dimensions/width: 4.826 mm
External dimensions/height: 16.51 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Rail, Tube
Other/Manufacturing Applications: Power Management, Power Management, Communications&Networking, Communication and Networking
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: PB free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DN2540N3-G
|
Microchip | 功能相似 | TO-226-3 |
MICROCHIP DN2540N3-G 晶体管, MOSFET, N沟道, 120 mA, 400 V, 17 ohm, 0 V
|
||
DN2540N3-G
|
Supertex | 功能相似 | TO-92 |
MICROCHIP DN2540N3-G 晶体管, MOSFET, N沟道, 120 mA, 400 V, 17 ohm, 0 V
|
||
|
|
Suptertex | 功能相似 |
MICROCHIP DN2540N5-G 晶体管, MOSFET, N沟道, 500 mA, 400 V, 17 ohm, 0 V
|
|||
DN2540N5-G
|
Microchip | 功能相似 | TO-220-3 |
MICROCHIP DN2540N5-G 晶体管, MOSFET, N沟道, 500 mA, 400 V, 17 ohm, 0 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review