Technical parameters/breakdown voltage (collector emitter): 160 V
Technical parameters/minimum current amplification factor (hFE): 80 @10mA, 5V
Technical parameters/rated power (Max): 300 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-23-6
External dimensions/packaging: SOT-23-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DMMT5551-7-F
|
Diodes | 完全替代 | SOT-23-6 |
DIODES INC. DMMT5551-7-F 双极晶体管阵列, NPN, 160 V, 300 mW, 200 mA, 80 hFE, SOT-26
|
||
DMMT5551-7-F
|
Diodes Zetex | 完全替代 | SOT-26 |
DIODES INC. DMMT5551-7-F 双极晶体管阵列, NPN, 160 V, 300 mW, 200 mA, 80 hFE, SOT-26
|
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