Technical parameters/tolerances: ±5 %
Technical parameters/forward voltage: 1.1V @200mA
Technical parameters/dissipated power: 500 mW
Technical parameters/voltage regulation value: 3.9 V
Technical parameters/rated power (Max): 500 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: Mini-MELF
External dimensions/packaging: Mini-MELF
Physical parameters/operating temperature: -65℃ ~ 175℃
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMSZ3V9T1G
|
ON Semiconductor | 功能相似 | SOD-123 |
ON SEMICONDUCTOR MMSZ3V9T1G 单管二极管 齐纳, 3.9 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C
|
||
MMSZ4686T1G
|
ON Semiconductor | 功能相似 | SOD-123 |
ON SEMICONDUCTOR MMSZ4686T1G 单管二极管 齐纳, 稳压器, 3.9 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C
|
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