Technical parameters/power supply voltage (DC): 44.0V (max)
Technical parameters/power supply current: 30.0 mA
Technical parameters/number of channels: 1
Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 35.0 Ω
Technical parameters/dissipated power: 400 mW
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 400 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC
External dimensions/height: 1.55 mm
External dimensions/packaging: SOIC
Other/Packaging Methods: Each
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DG419CY+T
|
Maxim Integrated | 完全替代 | SOIC-8 |
Analog Switch Single SPDT 8Pin SOIC N T/R
|
||
DG419DJ
|
Maxim Integrated | 完全替代 | DIP-8 |
改进, SPST / SPDT模拟开关 Improved, SPST/SPDT Analog Switches
|
||
DG419DJ
|
Vishay Siliconix | 完全替代 | DIP-8 |
改进, SPST / SPDT模拟开关 Improved, SPST/SPDT Analog Switches
|
||
DG419DY+T
|
Maxim Integrated | 类似代替 | SOIC-8 |
模拟开关 IC SPDT Precision CMOS
|
||
DG419DY-E3
|
VISHAY | 类似代替 | SOIC-8 |
VISHAY DG419DY-E3 模拟开关, SPDT, 1 放大器, 35 ohm, ± 15V, SOIC, 8 引脚
|
||
DG419DY-E3
|
Vishay Siliconix | 类似代替 | SOIC-8 |
VISHAY DG419DY-E3 模拟开关, SPDT, 1 放大器, 35 ohm, ± 15V, SOIC, 8 引脚
|
||
DG419DY-E3
|
Vishay Intertechnology | 类似代替 | SOIC-8 |
VISHAY DG419DY-E3 模拟开关, SPDT, 1 放大器, 35 ohm, ± 15V, SOIC, 8 引脚
|
||
DG419DY-T1-E3
|
VISHAY | 完全替代 | SOIC-8 |
Analog Switch Single SPDT 8Pin SOIC N T/R
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review