Technical parameters/forward voltage: 1.1V @1A
Technical parameters/forward current: 1 A
Technical parameters/Maximum forward surge current (Ifsm): 50 A
Technical parameters/forward voltage (Max): 1.1 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: EDIP-4
External dimensions/length: 8.51 mm
External dimensions/width: 6.5 mm
External dimensions/height: 3.3 mm
External dimensions/packaging: EDIP-4
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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FUJI | 功能相似 |
FAIRCHILD SEMICONDUCTOR DF02M 二极管 桥式整流, 单相, 200 V, 1.5 A, DIP, 1.1 V, 4 引脚
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International Rectifier | 功能相似 | DIP |
FAIRCHILD SEMICONDUCTOR DF02M 二极管 桥式整流, 单相, 200 V, 1.5 A, DIP, 1.1 V, 4 引脚
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DF02M
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Diodes | 功能相似 | EDIP-4 |
FAIRCHILD SEMICONDUCTOR DF02M 二极管 桥式整流, 单相, 200 V, 1.5 A, DIP, 1.1 V, 4 引脚
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DF02M
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Diodes Zetex | 功能相似 | DF-M |
FAIRCHILD SEMICONDUCTOR DF02M 二极管 桥式整流, 单相, 200 V, 1.5 A, DIP, 1.1 V, 4 引脚
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DF02M
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Luguang Electronic | 功能相似 |
FAIRCHILD SEMICONDUCTOR DF02M 二极管 桥式整流, 单相, 200 V, 1.5 A, DIP, 1.1 V, 4 引脚
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DF02M/45
|
VISHAY | 完全替代 | DFM |
桥式整流器 RECOMMENDED ALT 625-DF02M-E3
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