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Model DDTC114GE-7
Description Bipolar transistor - pre biased 150MW 10KW
Product QR code
Brand: Diodes
Packaging SOT-523-3
Delivery time
Packaging method Cut Tape (CT)
Standard packaging quantity 1
0.18  yuan 0.18yuan
20+:
$ 0.2457
50+:
$ 0.2275
100+:
$ 0.2184
300+:
$ 0.2111
500+:
$ 0.2057
1000+:
$ 0.2020
5000+:
$ 0.1984
10000+:
$ 0.1947
Quantity
20+
50+
100+
300+
500+
Price
$0.2457
$0.2275
$0.2184
$0.2111
$0.2057
Price $ 0.2457 $ 0.2275 $ 0.2184 $ 0.2111 $ 0.2057
Start batch production 20+ 50+ 100+ 300+ 500+
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  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3266) Minimum order quantity(20)
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Technical parameters/rated voltage (DC): 50.0 V

Technical parameters/rated current: 100 mA

Technical parameters/polarity: NPN

Technical parameters/breakdown voltage (collector emitter): 50 V

Technical parameters/maximum allowable collector current: 100mA

Technical parameters/minimum current amplification factor (hFE): 30 @5mA, 5V

Technical parameters/rated power (Max): 150 mW

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: SOT-523-3

External dimensions/length: 1.6 mm

External dimensions/width: 0.8 mm

External dimensions/height: 0.75 mm

External dimensions/packaging: SOT-523-3

Other/Product Lifecycle: Active

Other/Packaging Methods: Cut Tape (CT)

Compliant with standards/RoHS standards: Non-Compliant

Compliant with standards/lead standards: Contains Lead

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
DDTC114GE-7-F DDTC114GE-7-F Diodes 完全替代 SOT-523
Trans Digital BJT NPN 50V 100mA 3Pin SOT-523 T/R
PDF
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TRANS PREBIAS NPN 200mW SOT323
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PDTC114EU,135 PDTC114EU,135 NXP 功能相似 SOT-323-3
TRANS PREBIAS NPN 200mW SOT323
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