Technical parameters/rated voltage (DC): -50.0 V
Technical parameters/rated current: -100 mA
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 200 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 30 @5mA, 5V
Technical parameters/rated power (Max): 200 mW
Technical parameters/gain bandwidth: 250 MHz
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SOT-323-6
External dimensions/height: 1 mm
External dimensions/packaging: SOT-323-6
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DDA114EU-7
|
Diodes Zetex | 功能相似 | TSSOP-6 |
晶体管-双极-BJT-阵列-预偏置
|
||
DDA114EU-7
|
Diodes | 功能相似 | SOT-323-6 |
晶体管-双极-BJT-阵列-预偏置
|
||
DDA114EU-7-F
|
Diodes Zetex | 类似代替 | SOT-363 |
DDA114EU-7-F 双 PNP 数字晶体管, -100 mA, Vce=-50 V, 电阻比:10 kΩ, 6针 SOT-363封装
|
||
DDA114EU-7-F
|
Diodes | 类似代替 | SC-70-6 |
DDA114EU-7-F 双 PNP 数字晶体管, -100 mA, Vce=-50 V, 电阻比:10 kΩ, 6针 SOT-363封装
|
||
PUMB11,115
|
NXP | 功能相似 | SOT-363-6 |
NXP PUMB11,115 双极晶体管阵列, BRT, PNP, -50 V, 200 mW, -100 mA, 30 hFE, SOT-363
|
||
PUMB11,115
|
Nexperia | 功能相似 | SC-70-6 |
NXP PUMB11,115 双极晶体管阵列, BRT, PNP, -50 V, 200 mW, -100 mA, 30 hFE, SOT-363
|
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