Technical parameters/rated voltage (DC): -50.0 V
Technical parameters/rated current: -100 mA
Technical parameters/rated power: 0.2 W
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 0.2 W
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 100 @1mA, 5V
Technical parameters/rated power (Max): 200 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/gain bandwidth: 250 MHz
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SC-70-6
External dimensions/height: 1 mm
External dimensions/packaging: SC-70-6
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DDA143TU-7
|
Diodes | 完全替代 | SOT-363-6 |
Trans Digital BJT PNP 50V 100mA 200mW Automotive 6Pin SOT-363 T/R
|
||
PUMB11,115
|
NXP | 功能相似 | SOT-363-6 |
NXP PUMB11,115 双极晶体管阵列, BRT, PNP, -50 V, 200 mW, -100 mA, 30 hFE, SOT-363
|
||
PUMB11,115
|
Nexperia | 功能相似 | SC-70-6 |
NXP PUMB11,115 双极晶体管阵列, BRT, PNP, -50 V, 200 mW, -100 mA, 30 hFE, SOT-363
|
||
PUMB11@115
|
NXP | 类似代替 | TSSOP |
Trans Digital BJT PNP 50V 100mA 6Pin TSSOP T/R
|
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