Technical parameters/rated voltage (DC): -30.0 V
Technical parameters/rated current: -3.05 A
Technical parameters/drain source resistance: 85.0 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.25 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 3.05 A
Technical parameters/rise time: 16.0 ns
Technical parameters/Input capacitance (Ciss): 750pF @24V(Vds)
Technical parameters/rated power (Max): 730 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
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