Technical parameters/rated voltage (DC): 6.20 V
Technical parameters/rated power: 1.00 W
Technical parameters/breakdown voltage: 6.20 V
Technical parameters/number of pins: 2
Technical parameters/dissipated power: 1 W
Technical parameters/voltage regulation value: 6.2 V
Technical parameters/operating temperature (Max): 200 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-41
External dimensions/packaging: DO-41
Other/Product Lifecycle: Active
Other/Packaging Methods: Each
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N5341BG
|
ON Semiconductor | 功能相似 | DO-35-2 |
ON SEMICONDUCTOR 1N5341BG 单管二极管 齐纳, 6.2 V, 5 W, 017AA, 5 %, 2 引脚, 200 °C
|
||
1N5341BG
|
Motorola | 功能相似 |
ON SEMICONDUCTOR 1N5341BG 单管二极管 齐纳, 6.2 V, 5 W, 017AA, 5 %, 2 引脚, 200 °C
|
|||
BZV85-C6V2
|
NXP | 类似代替 | DO-41 |
NXP BZV85-C6V2 单管二极管 齐纳, 6.2 V, 1 W, DO-41, 5 %, 2 引脚, 200 °C
|
||
|
BZV85-C6V2
|
Philips | 类似代替 |
NXP BZV85-C6V2 单管二极管 齐纳, 6.2 V, 1 W, DO-41, 5 %, 2 引脚, 200 °C
|
|||
|
BZV85-C6V2
|
Microsemi | 类似代替 |
NXP BZV85-C6V2 单管二极管 齐纳, 6.2 V, 1 W, DO-41, 5 %, 2 引脚, 200 °C
|
|||
BZX85C6V2
|
Central Semiconductor | 功能相似 | DO-41 |
1W，BZX85C 系列，Fairchild Semiconductor ### 齐纳二极管，Fairchild Semiconductor
|
||
BZX85C6V2
|
ON Semiconductor | 功能相似 | DO-41 |
1W，BZX85C 系列，Fairchild Semiconductor ### 齐纳二极管，Fairchild Semiconductor
|
||
BZX85C6V2
|
Fairchild | 功能相似 | DO-41-2 |
1W，BZX85C 系列，Fairchild Semiconductor ### 齐纳二极管，Fairchild Semiconductor
|
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