Technical parameters/dissipated power: 1.3 W
Technical parameters/test current: 2.7 mA
Technical parameters/voltage regulation value: 100 V
Technical parameters/regulated current: 9.4 mA
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.3 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-41
External dimensions/packaging: DO-41
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Packaging Methods: Ammo Pack
Other/Minimum Packaging: 5000
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BZX85C100-TR
|
Vishay Semiconductor | 完全替代 | DO-41 |
1.3W,BZX85 系列,Vishay Semiconductor 硅平面齐纳二极管(电源) 适用于稳定和削波电路的应用,带有高额定功率 ### 齐纳二极管,Vishay Semiconductor
|
||
BZX85C100-TR
|
VISHAY | 完全替代 | DO-41 |
1.3W,BZX85 系列,Vishay Semiconductor 硅平面齐纳二极管(电源) 适用于稳定和削波电路的应用,带有高额定功率 ### 齐纳二极管,Vishay Semiconductor
|
||
BZX85C100-TR
|
Vishay Siliconix | 完全替代 |
1.3W,BZX85 系列,Vishay Semiconductor 硅平面齐纳二极管(电源) 适用于稳定和削波电路的应用,带有高额定功率 ### 齐纳二极管,Vishay Semiconductor
|
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