Technical parameters/dissipated power: 500 mW
Technical parameters/test current: 5 mA
Technical parameters/voltage regulation value: 9.1 V
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-35
External dimensions/length: 3.9 mm
External dimensions/packaging: DO-35
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 10000
Compliant with standards/RoHS standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
VISHAY | 功能相似 | DO-35-2 |
稳压二极管 RECOMMENDED ALT 78-BZX55B9V1
|
||
BZX55F9V1-TR
|
Vishay Semiconductor | 功能相似 | DO-35-2 |
稳压二极管 RECOMMENDED ALT 78-BZX55B9V1
|
||
|
|
NXP | 功能相似 | SOT-353 |
Zener Diode, 9.1V V(Z), 2%, 0.5W, Silicon, Unidirectional, DO-35, HERMETIC SEALED, GLASS PACKAGE-2
|
||
BZX79-B9V1
|
Good-Ark Electronics | 功能相似 | DO-35 |
Zener Diode, 9.1V V(Z), 2%, 0.5W, Silicon, Unidirectional, DO-35, HERMETIC SEALED, GLASS PACKAGE-2
|
||
|
BZX79B9V1
|
EIC | 功能相似 | DO-35 |
Zener Diode, 9.1V V(Z), 1.98%, 0.5W, Silicon, Unidirectional, DO-35, ROHS COMPLIANT, HERMETICALLY SEALED, GLASS PACKAGE-2
|
||
|
BZX79B9V1
|
Electronics Industry | 功能相似 |
Zener Diode, 9.1V V(Z), 1.98%, 0.5W, Silicon, Unidirectional, DO-35, ROHS COMPLIANT, HERMETICALLY SEALED, GLASS PACKAGE-2
|
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